Polarized electroluminescence from silicon nanostructures
نویسندگان
چکیده
منابع مشابه
Electroluminescence from silicon-rich nitride/silicon superlattice structures
Luminescent silicon-rich nitride/silicon superlattice structures SRN/Si-SLs with different silicon concentrations were fabricated by direct magnetron cosputtering deposition. Rapid thermal annealing at 700 °C resulted in the nucleation of small amorphous Si clusters that emit at 800 nm under both optical and electrical excitations. The electrical transport mechanism and the electroluminescence ...
متن کاملLuminescence from amorphous silicon nanostructures.
We present a model of size-dependent luminescence from a-Si:H and show that a blueshift of the luminescence energy and a general increase in luminescence quantum efficiency are predicted as structure size decreases. In contrast to bulk a-Si:H structures, highly confined a-Si:H exhibits visible luminescence peak energies and high radiative quantum efficiency at room temperature, which is insensi...
متن کاملInfrared electroluminescence from metal-oxide-semiconductor structures on silicon
Room temperature electroluminescence from metal-oxide–semiconductor structures on silicon is observed. The thin oxide is grown by rapid thermal oxidation. With the metal negatively biased, luminescence can be observed. The emission is voltage dependent. For an applied voltage below 5 V, the emission occurs around 1150 nm, approximately corresponding to the Si bandgap energy. For a larger applie...
متن کاملWhite Electroluminescence from C- and Si-rich Thin Silicon Oxides
O. Jambois, B. Garrido, P. Pellegrino, Josep Carreras, and A. Pérez-Rodríguez EME, Departament d’Electrónica, IN2UB, Universitat de Barcelona, Martí i Franquès 1, 08028 Barcelona, Spain J. Montserrat Instituto de Microelectrónica de Barcelona (IMB-CNM, CSIC), Bellaterra 08193, Barcelona, Spain C. Bonafos, G. BenAssayag, and S. Schamm Nanomaterials Group, CEMES-CNRS, 29 rue J. Marvig, 31055 Toul...
متن کاملTunneling Induced Electroluminescence from Metal-Oxide- Semiconductor Structure on Silicon
Silicon is the most important semiconductor material for electronics industry. However, its indirect bandgap makes it hardly emit light, so its applications in optoelectromcs are limited. Many efforts had been devoted to converting silicon to light-emitting materials, including porous silicon-based devices, nanociystalline Si, and so on. In this work, we report electroluminescence on silicon wi...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: physica status solidi (c)
سال: 2012
ISSN: 1862-6351
DOI: 10.1002/pssc.201100059